Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

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Rifki Amiruddin
Budi Syihabuddin
Yuyu Wahyu


The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 - 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.


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How to Cite
R. Amiruddin, B. Syihabuddin, and Y. Wahyu, “Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor”, INFOTEL, vol. 10, no. 1, pp. 7-14, Feb. 2018.


[1] D. M. Pozar, Microwave Engineering 4th Edition. New York: John Wiley & Sons, Inc., 2012.
[2] ORARI, "Keputusan Ketua Umum Organisasi Amatir Radio Indonesia Nomor KEP-065/OP/KU/2009 tentang Pembagian dan Penggunaan Segmen Band Frekuensi Amatir Radio (Bandplan)." pp. 1–9, 2009.
[3] J. Tetuko and S. Sumantyo, "Development of Circularly Polarized Synthetic Aperture Radar (CP-SAR) Onboard Small Satellite," pp. 334–341, 2011.
[4] K. Hayat, A. Kashif, S. Azam, T. Mehmood, and M. Imran, "High performance GaN HEMT class-AB RF power amplifier for L-band applications," Proc. 2013 10th Int. Bhurban Conf. Appl. Sci. Technol. IBCAST 2013, pp. 389–392, 2013.
[5] W. I. Prayogo, Y. Taryana, T. Praludi, Y. Sulaeman, Y. Wahyu, and B. S. Nugroho, "High Power Amplifier (HPA) pada Frekuensi 437,430 MHz untuk Aplikasi TTC Downlink Nano Satelit TEL-U SAT," J. Elektron. dan Telekomun., vol. 16, no. 2, pp. 40–45, 2016.
[6] G. Van Der Bent, A. P. De Hek, and F. E. Van Vliet, "20W S-band high power amplifier using stacked FET topology," EuMIC 2016 - 11th Eur. Microw. Integr. Circuits Conf., pp. 25–28, 2016.
[7] J. Lan, J. Zhou, Z. Yu, and B. Yang, "A broadband high efficiency Class-F power amplifier design using GaAs HEMT," 2015 IEEE Int. Wirel. Symp. IWS 2015, 2015.
[8] I. J. Bahl, Fundamentals of RF Fundamentals of RF and Microwave. John Wiley & Sons, Inc., 2009.
[9] G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Second Edi. Prentice Hall, 1997.
[10] C. Bowick, RF Circuit Design, Second Edi. Newnes, 2008.
[11] B. Syihabuddin, D. A. Nurmantris, and A. D. Prasetyo, "Perancangan Bandpass Filter Pita Sempit pada Frekuensi L-Band untuk Aplikasi Synthetic Aperture Radar (SAR)," vol. 9, no. 2, pp. 198–203, 2017.
[12] A. Grebennikov, N. Kumar, and B. S. Yarman, Broadband RF and Microwave Amplifiers. CRC Press, 2016.
[13] N. M. Mahyuddin, N. Liyana, and A. Latif, "A 10 GHz Low Phase Noise Split-Ring Resonator Oscillator," vol. 3, no. 6, pp. 584–589, 2013.
[14] NXP, "MMG15241H Datasheet," pp. 1–18, 2014.
[15] F. M. Al-Raie, "Design of Input Matching Networks for Class-E RF Power Amplifiers," High Freq. Electron., no. January, pp. 40–48, 2011