Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor

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Rifki Amiruddin Budi Syihabuddin Yuyu Wahyu

Abstract

The power amplifier which is designed by using BJT (Bipolar Junction Transistor) has a larger power consumption, hence in this research, the FET GaAs p-HEMT MMG15241H is used. The power amplifier designed in this research uses microstrip-based and works at the middle frequency of 1.27 GHz. This research yielded a power amplifier which works at the bandwidth with a range frequency of 1.265 �¢?? 1.275 GHz, a gain result of 20.02 dB, and input return loss result of -24.45 dB.

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How to Cite
AMIRUDDIN, Rifki; SYIHABUDDIN, Budi; WAHYU, Yuyu. Design of L-Band Power Amplifier by Using Microstrip-Based GaAs p-HEMT MMG15241H Transistor. JURNAL INFOTEL, [S.l.], v. 10, n. 1, p. 7-14, feb. 2018. ISSN 2460-0997. Available at: <http://ejournal.st3telkom.ac.id/index.php/infotel/article/view/331>. Date accessed: 22 june 2018. doi: https://doi.org/10.20895/infotel.v10i1.331.
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